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Quantum Effects in MOSFET

riaz
in Quantum Theory

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Hello to all !

 

In MOSFET at strong inversion electrons confined to triangular quantum well, electrons occupy only 1 or 2 lowest subbands.
and the Van Dort model gives the quantum mechanical intrinsic carrier density in inversion channel via increased energy band-gap(ΔE).
NQM = NCL× Exp(-ΔE/2kt) this carrier amount is very high.
But density of states for inversion charges in subbads reduced from the higher 3-D density to the lower 2-D density.

Then still HOW the above Van Dort's formula giving that high amount of charge..?

  • 1 month later...

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