Hello semiconductor technologists!

 

I'm thinking at a source of extreme UV for semiconductor lithography, so what would be your wishes, as compared to the first figures that emerge from my rantings?

 

I take 30nm wavelength. Would less be better? I fear fluorescence hampers lithography.

 

Right now I estimate half a watt of light is produced, continuous and monochromatic and coherent, initially in a narrow beam of small divergence. Could that be enough?

 

This absolute silver bullet would cost several millions. Is that any worry?

 

Thanks!

Marc Schaefer, aka Enthalpy

Found some answers.

 

-----

 

All actors consider wavelengths like 13.5nm or 11nm.

 

The synchrotron and undulator I considered is already an old idea, the current advances being fluorescence in various forms, which provides more power than the half-watt typical of synchrotrons and undulators.

 

Present sources are ArF excimer lasers, they deliver for instance 60W at 193nm.

 

Lenses are a difficulty because materials are opaque. Mirrors aren't much better, achieving 50% reflectivity at normal incidence.

 

-----

 

I wanted to give the accelerating cavities the same wavelength as the undulator, and now I'm confident this already exists.

 

I wanted to add a Perot-Fabry cavity around the undulator to increase the output power. This has been considered but is difficult at such a wevelength because neither mirrors nor light guides are efficient.

 

Apparently I won't bring anything new nor useful in this topic and give it up.