Impurity Concetration

I have a question here,A uniform doped n-type silicon substrate of 0.1ohm-cm resistivity is to be subjected to a boron diffusion with constant surface concetration of [math]

4.8*10^{-17}

[/math]

[math]

cm^{3}

[/math].The desired junction depth is [math]

2.8*10^{-6}m

[/math].Calculate the impurity concetration for the boron diffusion as a function of distance from the surface and how long will it take to cover the distance if the temperature at which this diffusion is conducted is a 1100Cetigrade