LUFER Posted July 2, 2022 Share Posted July 2, 2022 Exercise: Considering an intrinsic silicon bar at room temperature 300 K where concentration of electrons and holes with acceptor type impurities ( type P) in a concentration of 4*10^17 cm-3., q = 1.6*10^ (-19)C, kT=0.0259 eV, ni = 1.45*10^(10)cm^(-3), Eg=1.1 eV. I'm having a hard time finding Ec and Ev, if I use the equation I lack data to get this reference if I use the concept of a graph, what I need is to find the value of Ec and Ev. If I describe that Ef -Ec = - Eg/2, the values are very high there's another equation missing that I'm not able to fit here I don't know if I should be Fermi Energy, but if I insert it as a P-type material, the value is still taken Link to comment Share on other sites More sharing options...
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