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riaz

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Posts posted by riaz

  1. Hello to all !

     

    In MOSFET at strong inversion electrons confined to triangular quantum well, electrons occupy only 1 or 2 lowest subbands.
    and the Van Dort model gives the quantum mechanical intrinsic carrier density in inversion channel via increased energy band-gap(ΔE).
    NQM = NCL× Exp(-ΔE/2kt) this carrier amount is very high.
    But density of states for inversion charges in subbads reduced from the higher 3-D density to the lower 2-D density.

    Then still HOW the above Van Dort's formula giving that high amount of charge..?

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